preliminary data sheet 1 of 10 rev. 02, 2005-05-16 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA212002E description the PTFA212002E is a 200-watt, internally-matched, laterally double- diffused, goldmos push-pull fet. it is characaterized for single- and two-carrier wcdma operation from 2110 to 2170 mhz. ther- mally-enhanced packaging provides the coolest operation avail- able. full gold metallization ensures excellent device lifetime and reliability. PTFA212002E package 30275 thermally-enhanced high power rf ldmos fet 200 w, 2110 ? 2170 mhz two?carrier wcdma drive?up -55 -50 -45 -40 -35 -30 -25 37 40 43 46 49 output power, avg. (dbm) imd (dbc), acpr (dbc) 5 10 15 20 25 30 35 efficiency (%), gain (db) gain drain efficiency v dd = 28 v, i dq = 1600 ma, f 1 = 2140 mhz, f 2 = 2150 mhz, 3gpp wcdma signal, p/a r = 8.0 db, 3.84 mhz bw im3 acpr rf characteristics wcdma measurements (tested in infineon test fixture) v dd = 28 v, i dq = 2 x 800 ma, p out = 44 w average f 1 = 2135 mhz, f 2 = 2145 mhz, 3gpp signal, channel bandwidth = 3.84 mhz , peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 14 15 ? db drain efficiency h d 25.5 27 ? % intermodulation distortion imd ? ?37 ?35 dbc ? thermally-enhanced packaging ? broadband internal matching ? typical two-carrier wcdma performance at 2140?mhz, 28 v - average output power = 44 w - gain = 15 db - efficiency = 27% - im3 = ?37 dbc - acpr < ?40 dbc ? typical cw performance at 2140 mhz, 28 v - output power at p?1db = 220 w - efficiency = 56% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability ? low hci drift ? capable of handling 10:1 vswr @ 28 v, 200 w (cw) output power
PTFA212002E preliminary data sheet 2 of 10 rev. 02, 2005-05-16 dc characteristics (per side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a drain leakage current v ds = 63 v, v gs = 0 v i dss ? ? 10 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.08 ? w operating gate voltage v ds = 28 v, i dq = 800 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 795 w above 25c derate by 4.55 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 200 w cw) r q jc 0.22 c/w ordering information type package outline package description marking PTFA212002E 30275 thermally-enhanced slotted flange, push-pull PTFA212002E
PTFA212002E preliminary data sheet 3 of 10 rev. 02, 2005-05-16 broadband circuit performance v dd = 28 v, i dq = 1600 ma, p out = 46.4 dbm cw 0 5 10 15 20 25 30 2070 2110 2150 2190 frequency (mhz) gain (db), efficiency (%) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 input return loss (db) gain efficiency input return typical performance (data taken in a production test fixture) intermodulation distortion products vs. tone spacing v dd = 28 v, i dq = 1600 ma, p out = 200 w pep, f = 2140 mhz -55 -50 -45 -40 -35 -30 -25 0 10 20 30 40 tone spacing (mhz) imd (dbc) 3rd order 5th order 7th order power sweep, cw conditions v dd = 28 v, i dq = 1600 ma, f = 2140 mhz 13 14 15 16 17 40 43 46 49 52 55 output power (dbm) gain (db) 10 20 30 40 50 60 drain efficiency (%) gain efficiency t case = 25c t case = 90c two?tone drive?up v dd = 28 v, i dq = 1600 ma, f = 2140 mhz, tone spacing = 10 mhz 0 5 10 15 20 25 30 35 40 45 42 44 46 48 50 52 54 output power (dbm), pep drain efficiency (%) -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 intermodulation distortion (dbc) im7 im3 efficiency im5
PTFA212002E preliminary data sheet 4 of 10 rev. 02, 2005-05-16 voltage sweep i dq = 1600 ma, f = 2140 mhz, p out = 200 w pep, tone spacing = 1 mhz 5 10 15 20 25 30 35 40 45 50 22 24 26 28 30 32 34 drain voltage (v) -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 im3 (dbc) drain efficiency im3 gain efficiency (%), gain (db) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.4 a 1.2 a 2.0 a 3.0 a 6.0 a 9.0 a 12.0 a 15.0 a 18.0 a single-carrier wcdma drive-up v dd = 28 v, i dq = 1600 ma, f = 2140 mhz, 3gpp wcdma signal, test model 1 w/ 16 dpch 67% clipping, p/a r = 8.7 db, 3.84 mhz bw 0 5 10 15 20 25 30 35 40 35 38 41 44 47 50 output power (dbm), avg. -60 -55 -50 -45 -40 -35 -30 -25 -20 acpr (db) drain efficiency gain acpr acpr up acpr low drain efficiency (%), gain (db) typical performance (cont.)
PTFA212002E preliminary data sheet 5 of 10 rev. 02, 2005-05-16 broadband circuit impedance frequency z source w z load w mhz r jx r jx 2050 12.21 ?12.34 4.95 ?6.77 2075 11.36 ?12.55 4.80 ?6.45 2100 10.52 ?12.61 4.66 ?6.12 2125 9.73 ?12.53 4.52 ?5.80 2150 9.00 ?12.35 4.39 ?5.47 2175 8.33 ?12.08 4.27 ?5.15 2200 7.73 ?11.76 4.16 ?4.82 2225 7.20 ?11.39 4.06 ?4.49 see next page for circuit information. 0.1 0.3 0.2 0.4 0 . 1 0 . 1 0 . 3 0 . 2 4 5 0 . 0 5 0 . 0 z load z source 2050 mhz 2225 mhz 2050 mhz 2225 mhz z 0 = 50 w z source z load g d g s d
PTFA212002E preliminary data sheet 6 of 10 rev. 02, 2005-05-16 (table cont. next page) r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 c1 0.001f v dd qq1 q1 r5 10 v 20pf 10 f 35v 1f 10f 50v 10pf 0.1f 10pf 1f v dd l 1 l 6 l 5 l 7 l 9 l 11 l 17 l 18 l 15 l 19 l 21 l 23 l 26 l 27 1k v v r6 r7 r8 c5 c4 c8 dut rf_in c13 c15 c19 c23 c20 c16 c14 rf_out v 10f 50v 1k v dd l 16 l 20 l 25 12pf c22 l 14 c11 8.2pf l 10 l 8 c9 20pf l 12 l 4 l 2 l 13 c12 8.2pf 0.8pf c10 12pf 0.02f c17 0.02f c18 10 r9 v 10 c6 0.1pf l 3 c7 0.4 - 2.5pf 0.4 - 2.5pf c21 a212002e_sch l 22 l 24 reference circuit reference circuit schematic for f = 2140 mhz circuit assembly information dut PTFA212002E ldmos transistor pcb 0.76 mm [.030"] thick, e r = 3.48 rogers 4350 1 oz. copper microstrip electrical characteristics at 2140 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.060 l , 50.0 w 5.08 x 1.70 0.200 x 0.067 l 2 0.225 l , 50.0 w 19.05 x 1.70 0.750 x 0.067 l 3 0.210 l , 36.0 w 16.99 x 2.84 0.669 x 0.112 l 4 0.090 l , 36.0 w 7.57 x 2.84 0.298 x 0.112 l 5 0.550 l , 50.0 w 47.07 x 1.70 1.853 x 0.067 l 6 0.050 l , 50.0 w 4.39 x 1.70 0.173 x 0.067 l 7, l 8 0.110 l , 32.0 w 9.04 x 3.30 0.356 x 0.130 l 9, l 10 0.070 l , 22.4 w 5.84 x 5.26 0.230 x 0.207 l 11, l 12 0.090 l , 9.1 w 6.86 x 15.09 0.270 x 0.594 l 13, l 14 0.280 l , 50.0 w 23.88 x 1.70 0.940 x 0.067 l 15, l 16 0.129 l , 8.4 w 10.01 x 16.33 0.394 x 0.643 1 electrical characteristics are rounded.
PTFA212002E preliminary data sheet 7 of 10 rev. 02, 2005-05-16 reference circuit (cont.) circuit assembly information (cont.) microstrip electrical characteristics at 2140 mhz* dimensions: l x w (mm) dimensions: l x w (in.) l 17, l 18 0.102 l , 50.0 w 8.64 x 1.70 0.340 x 0.067 l 19, l 20 0.035 l , 13.1 w 2.74 x 9.96 0.108 x 0.392 l 21, l 22 0.102 l , 20.5 w 4.70 x 2.72 0.185 x 0.107 l 23 0.090 l , 50.0 w 6.43 x 1.70 0.253 x 0.067 l 24 0.620 l , 50.0 w 52.32 x 1.70 2.060 x 0.067 l 25 0.264 l , 36.0 w 21.79 x 2.84 0.858 x 0.112 l 26 0.136 l , 50.0 w 11.51 x 1.70 0.453 x 0.067 component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 capacitor, 10 f, 35 v, tant te series digi-key pcs6106tr-nd, smd c5 capacitor, 0.1 f digi-key p4525-nd c6 ceramic capacitor, 0.1 pf atc 100b 0r1 c7, c21 variable capacitor, 0.4 ? 2.5 pf temex usa at27280 c8, c9 ceramic capacitor, 20 pf atc 100a 200 c10 ceramic capacitor, 0.8 pf atc 100b 0r8 c11, c12 ceramic capacitor, 8.2 pf atc 100b 8r2 c13, c14 ceramic capacitor, 10 pf atc 100b 100 c15, c16 ceramic capacitor, 1 f atc 920c105 c17, c18 ceramic capacitor, 0.02 f atc 200b203 c19, c20 tantalum capacitor, 10 f, 50 v digi-key p5182-nd c22, c23 ceramic capacitor, 12 pf atc 100b 120 q1 transistor infineon bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor, 2 k-ohms digi-key p2kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r8, r9 chip resistor, 10 ohms digi-key p10ect-nd r6, r7 chip resistor, 1 k-ohms digi-key p1kect-nd
PTFA212002E preliminary data sheet 8 of 10 rev. 02, 2005-05-16 reference circuit (not to scale)* reference circuit (cont.) *gerber files for this circuit available on request 10 35v + lm a212002e_assy v dd v dd v dd
PTFA212002E preliminary data sheet 9 of 10 rev. 02, 2005-05-16 package outline specifications package 30275 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower s 41.15 [1.620] 1.63 [.064] 2.18 [.086] sph 31.240.28 [1.230.011] 35.56 [1.400] 4x 11.68 [.460] d g d 16.610.51 [.654.020] 2x r 1.59 [.063] 2x 3.18 [.125] 9.40 [.370 ] +0.10 -0.15 +.004 -.006 0.038 [.0015] -a- 2x 455 x 1.19 [.047] 4.550.38 [.179.015] 10.16 [.400] 4x 3.230.25 [.127.010] g era-h-30275-4-1-2304 [.360 ] +.004 -.006 lid 9.14 +0.10 -0.15
preliminary data sheet 10 of 10 rev. 02, 2005-05-16 PTFA212002E confidential, limited internal revision history: 2005-05-16 preliminary data sheet previous version: 2005-01-21, preliminary data sheet page subjects (major changes since last revision) 3 ? 8 added performance and circuit information goldmos ? is a registered trademark of infineon technologies ag. edition 2005-05-16 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2005. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-goldmos) usa or +1 408 776 0600 international
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